? semiconductor components industries, llc, 2011 september, 2011 ? rev. 7 1 publication order number: mbd110dwt1/d mbd110dwt1g, mbd330dwt1g, mbd770dwt1g dual schottky barrier diodes application circuit designs are moving toward the consolidation of device count and into smaller packages. the new sot ? 363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six ? leaded package. the sot ? 363 is ideal for low ? power surface mount applications where board space is at a premium, such as portable products. surface mount comparisons: sot ? 363 sot ? 23 area (mm 2 ) 4.6 7.6 max package p d (mw) 120 225 device count 2 1 space savings: package 1 x sot ? 23 2 x sot ? 23 sot ? 363 40% 70% the mbd110dw, mbd330dw, and mbd770dw devices are spin ? offs of our popular mmbd101lt1, mmbd301lt1, and mmbd701lt1 sot ? 23 devices. they are designed for high ? efficiency uhf and vhf detector applications. readily available to many other fast switching rf and digital applications. features ? extremely low minority carrier lifetime ? very low capacitance ? low reverse leakage ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit reverse voltage mbd110dwt1g mbd330dwt1g mbd770dwt1g v r 7.0 30 70 v forward current (dc) mbd330dwt1g i f 200 max ma forward power dissipation t a = 25 c p f 120 mw junction temperature t j ? 55 to +125 c storage temperature range t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. http://onsemi.com sc ? 88 / sot ? 363 case 419b style 6 marking diagram anode 1 6 cathode cathode 3 4 anode n/c 2 5 n/c xx m xx = device code refer to ordering table, page 2 m = date code = pb ? free package (note: microdot may be in either location) 1 6 see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information 1
mbd110dwt1g, mbd330dwt1g, mbd770dwt1g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 a) mbd110dwt1g mbd330dwt1g mbd770dwt1g v (br)r 7.0 30 70 10 ? ? ? ? ? v diode capacitance (v r = 0, f = 1.0 mhz, note 1) mbd110dwt1g c d ? 0.88 1.0 pf total capacitance (v r = 15 volts, f = 1.0 mhz) mbd330dwt1g (v r = 20 volts, f = 1.0 mhz) mbd770dwt1g c t ? ? 0.9 0.5 1.5 1.0 pf reverse leakage (v r = 3.0 v) mbd110dwt1g (v r = 25 v) mbd330dwt1g (v r = 35 v) mbd770dwt1g i r ? ? ? 0.02 13 9.0 0.25 200 200 a na na noise figure (f = 1.0 ghz, note 2) mbd110dwt1g nf ? 6.0 ? db forward voltage (i f = 10 ma) mbd110dwt1g (i f = 1.0 ma) mbd330dwt1g (i f = 10 ma) (i f = 1.0 ma) mbd770dwt1g (i f = 10 ma) v f ? ? ? ? ? 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 v ordering information device marking package shipping ? mbd110dwt1g m4 sc ? 88 / sot ? 363 (pb ? free) 3000 units / tape & reel mbd330dwt1g t4 sc ? 88 / sot ? 363 (pb ? free) mbd770dwt1g h5 sc ? 88 / sot ? 363 (pb ? free) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mbd110dwt1g, mbd330dwt1g, mbd770dwt1g http://onsemi.com 3 typical characteristics mbd110dwt1g figure 1. reverse leakage t a , ambient temperature ( c) figure 2. forward voltage v f , forward voltage (volts) figure 3. capacitance v r , reverse voltage (volts) figure 4. noise figure p lo , local oscillator power (mw) nf, noise figure (db) , forward current (ma) i f , reverse leakage ( a) i r 0.1 0.2 0.5 1.0 2.0 5.0 10 11 10 9 8 7 6 5 4 3 2 1 0 1.0 2.0 3.0 4.0 1.0 0.9 0.8 0.7 0.6 0.3 0.4 0.5 0.6 100 10 1.0 0.1 0.7 0.8 30 40 50 60 70 80 100 1.0 130 110 120 90 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 figure 5. noise figure test circuit local oscillator uhf noise source h.p. 349a noise figure meter h.p. 342a diode in tuned mount if amplifier nf = 1.5 db f = 30 mhz v r = 3.0 v local oscillator frequency = 1.0 ghz (test circuit figure 5) t a = -40 c t a = 85 c t a = 25 c note 3 ? l s is measured on a package having a short instead of a die, using an impedance bridge (boonton radio model 250a rx meter). note 1 ? c d and c t are measured using a capacitance bridge (boonton electronics model 75a or equival- ent). note 2 ? noise figure measured with diode under test in tuned di- ode mount using uhf noise source and local oscillator (lo) frequency of 1.0 ghz. the lo power is adjusted for 1.0 mw. if amplifier nf = 1.5 db, f = 30 mhz, see figure 5. notes on testing and specifications mbd110dwt1g mbd110dwt1g mbd110dwt1g mbd110dwt1g c d , capacitance (pf)
mbd110dwt1g, mbd330dwt1g, mbd770dwt1g http://onsemi.com 4 typical characteristics mbd330dwt1g v r , reverse voltage (volts) figure 6. total capacitance i f , forward current (ma) figure 7. minority carrier lifetime v r , reverse voltage (volts) figure 8. reverse leakage v f , forward voltage (volts) figure 9. forward voltage krakauer method f = 1.0 mhz , forward current (ma) i f , reverse leakage ( a) i r 0.2 0.4 0.6 0.8 1.0 1.2 0 6.0 12 18 24 10 1.0 0.1 0.01 0.001 0204060 500 0 80 100 0 3.0 6.0 9.0 12 15 21 2.8 30 24 27 18 2.4 2.0 1.6 1.2 0.8 0 100 10 1.0 0.1 30 10 30 50 70 90 400 300 200 100 0.4 , minority carrier lifetime (ps) , total capacitance (pf) c t t a = -40 c t a = 85 c t a = 25 c t a = 100 c t a = 75 c t a = 25 c mbd330dwt1g mbd330dwt1g mbd330dwt1g mbd330dwt1g
mbd110dwt1g, mbd330dwt1g, mbd770dwt1g http://onsemi.com 5 typical characteristics mbd770dwt1g figure 10. total capacitance figure 11. minority carrier lifetime figure 12. reverse leakage figure 13. forward voltage v r , reverse voltage (volts) i f , forward current (ma) v r , reverse voltage (volts) v f , forward voltage (volts) krakauer method f = 1.0 mhz , forward current (ma) i f , reverse leakage ( a) i r 0.2 0.4 0.8 1.2 1.6 2.0 0 10203040 10 1.0 0.1 0.01 0.001 0204060 500 0 80 100 0 5.0 10 15 20 25 35 50 40 45 30 2.0 1.6 1.2 0.8 0 100 10 1.0 0.1 50 10 30 50 70 90 400 300 200 100 0.4 , minority carrier lifetime (ps) , total capacitance (pf) c t t a = -40 c t a = 85 c t a = 25 c t a = 100 c t a = 75 c t a = 25 c mbd770dwt1g mbd770dwt1g mbd770dwt1g mbd770dwt1g
mbd110dwt1g, mbd330dwt1g, mbd770dwt1g http://onsemi.com 6 package dimensions sc ? 88 / sc ? 70 / sot ? 363 case 419b ? 02 issue w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 style 6: pin 1. anode 2 2. n/c 3. cathode 1 4. anode 1 5. n/c 6. cathode 2 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mbd110dwt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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